The rapid expansion of AI workloads has exposed a critical bottleneck in computing infrastructure: memory. Traditional DRAM offers high speed but is volatile, requiring continuous power to retain data. This inefficiency inflates costs, CO₂ emissions, and regulatory risks.
Ferroelectric Memory GmbH (FMC), founded in Dresden in 2016, tackles this challenge with a memory solution called DRAM+. Based on ferroelectric hafnium oxide technology, DRAM+ couples the speed of conventional DRAM with non-volatile persistence.
Earlier this week, FMC raised €100 million in a funding round, led by HV Capital and backed by the European Innovation Council.
The fresh funding will accelerate the commercialisation of the company’s DRAM+ and 3D CHACHE+ memory chips and system solutions and expand its global presence. FMC’s technology builds on its superior energy efficiency and will facilitate the global ramp-up of AI data centres and AI edge applications, setting a new industry standard in the €100+ billion memory chip market.
Making Europe a leader in semiconductor memory technologies
FMC emerged from research at TU Dresden and Globalfoundries, with founders including Wolfram Drescher, Dr Stefan Müller, Menno Mennenga, and Marko Noack. The company is currently led by CEO Thomas Rueckes, with key leaders including Ayman Abouelwafa and Maher Amer. Their mission is to establish Europe as a leader in semiconductor memory technologies indispensable for the AI era.
At the heart of FMC is the use of ferroelectric hafnium oxide to build non-volatile memory cells called FeFETs and FeCAPs. Unlike legacy ferroelectric memories, which struggled with integration and density, FMC’s technology is compatible with modern CMOS processes and scales well below 10 nm.
Thomas Rückes, CEO of FMC, said,“We are working on the next generation of memory chips and system solutions that are not only more sustainable and energy efficient, but also faster and less expensive than the current industry standard. While bandwidth has so far been the dominant metric of AI compute, energy efficiency is now becoming the key factor for the next generation of AI.
He added, “Memory chips are the main bottleneck in the AI stack. FMC’s DRAM+ and 3D CACHE+ technology addresses precisely this issue: Faster and more energy efficient than established products. This lays the foundation for scaling up AI data centres and AI edge applications.”
FMC’s main competitors lie within the broader “storage-class memory” field: technologies like STT-MRAM, Resistive RAM (ReRAM), Phase Change Memory (PCM), and Intel/Micron’s Optane (3D XPoint). FMC distinguishes itself through superior energy efficiency, scalability, and seamless integration into established fabrication processes.
What’s next?
FMC aims to launch its DRAM+ and 3D CACHE+ products into global markets starting in 2027. By partnering with leading semiconductor foundries and OEMs, FMC plans to achieve high-volume manufacturing at 300mm fabs worldwide.
The company’s roadmap includes transitioning from pilot design wins to large-scale supply agreements, expanding its strategic alliances, and advancing Europe’s ambition for semiconductor sovereignty.
